lionelgreenstreet@gmail.com wrote:

Threshold voltage is a MOSFET concept, not a bjt (bipolar junction
transistor) concept.

Bob Pownall

I have some problem in Sputtering Cr film on lithium niobate
substrate. The adhension of sputtered Cr film is bad and cannot stand
the wet etching process. Is andbody know the answer?
I would appreciate any input.

Hello,

I'm looking for an DUV curing machine. Is there a fab sale out etc., which
offers
such equipement (e.g. Axcelis/Fusion).

Thanks in advance.

Manfred

We are proud to announce the 6.0 release of the SUrrogate MOdeling
(SUMO)
Toolbox.

[*] The SUMO Toolbox is a Matlab toolbox that automatically generates
a surrogate model (= a metamodel, an approximation model) for a given
data source (a simulation code, data set, Matlab function, ...)
within the predefined accuracy, sample budget, and time limits set by
the user. It will automatically drive your simulation code generating
an approximation model (ANN, SVM, rational function, RBF model, ...)
that is as accurate as possible, using as little data points as
possible (since these are usually expensive).

For more information, screenshots, movies, downloads, etc. see:

http://www.sumowiki.intec.ugent.be/

[*] In this release many important bugs have been fixed and new
features (such as a model browser GUI) have been added. The release
notes are available here:

http://www.sumowiki.intec.ugent.be/index.php/Whats_new

All users are strongly advised to upgrade (remember to delete old
versions first).

Hi,

Does anyone know of a good selective etch (either dry or wet) that
etches SiO2 (or SiNx) but stops on SiCr (or other thin film resistor
materials such as WSi2)? Will BOE work?

thanks
Erji

Hi,
I am having issues with magnetron sputtering of Cr. The chamber and
the film seems to have coloration after depositing the film at 3 mTorr
and a DC power of 50-100 W. Since the Cr film should look like a nomal
metal (no color), I am looking to find solution to this issue. Also,
can anybody help me in understanding the drift in the manometer
pressure reading when the plasma is turned on for deposition?
I would appreciate any input.
thanks.

FPGA eBuzz - July 2008 (Volume 1, Issue 2, 24-July-08)
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submissions on a wide variety of FPGA/CPLD related topics. Refer here
for guidelines (http://www.fpgacentral.com/about/article-submission-
guideline ) about writing articles.

If you have a whitepaper or paper that you have already published and
would like to republish for better access, contact us. Send us an
email at "info at fpgacentral dot com"

* Submit IP, EDA Tools, Event, Webcast, Boards for FREE
--------------------------------------------------------------------------------------

Do you host or attend an event related to FPGA/CPLD ?
Do you or your company builds IP, EDA Tools or Products?
Do you like a webcast you see?

Then submit information goto www.fpgacentral.com/add

Hi,

You’re invited to join the DSP Group on LinkedIn. Joining will allow
you to find and contact other DSP (Digital Signal Processing) members
on LinkedIn. The goal of this group is to help members:

* Reach other members of DSP Community
* Accelerate careers/business through referrals from DSP Group members
* Know more than a name – view rich professional profiles from fellow
DSP Group members
* Share Articles, technical queries and more related to DSP

Here’s the link to join:
http://www.linkedin.com/e/gis/144812/778D3D27C9F0

Hope to see you in the group,

— The DSP Group Team

Hello,

I would be very grateful if someone out there could explain to me how
the proper PiN diode I-V characteristic should look like.

Is the total junction drop across the PiN junction 1.4Volts (due to
the interaction between the P+N and NN+ junctions) or is it just
0.7Volt?

I did some small research with regard to the above quesiton. From the
following two books:
1) Sorab k. Ghandi - "Semiconductor Power Devices" - ISBN:
0.47-02999-8
2) David J. Roulston - "Bipolar Semicondcutor Devices"

I have learnt that a proper PiN diode (P+NN+ junction operating under
forward bias) should have a total voltage drop across the PiN diode is
1.4Volts. From the books I know that the total voltage drop is
2*0.7Volts (P+N junction voltage and NN+ junction voltage, the latter
is related to the existence of the so called "retarding field").

Is 1.4Volts for a PiN diode really true?

I will appreciate any comments on that.

Guys,

I am trying to calculate the losses of a solar cell module. I think I
sort of succeeded for the 1D case, i.e., when the width of the cell is
larger than the length. For this case I have used a coupled of
differential equations:

V'(x) = -rho*I(x)
and
I'(x) = j(V(x))

where:

- rho is the sheet resistance of the transparent electrode (=usually
ITO, indium tin oxide)
- I(x) is the lateral current on the resistive electrode (ITO), in
another words, the "sheet current" that flows to the "positive"
electrode
- j(V(x) is the current density in the vertical direction which is
delivery by the cell.

Based on the above, I have calculated the Efficiency(%%) of the module
as a function of cell width because in this case, the cell is
basically a stripe, so 1D.